Constant final state measurements of surface core-level binding energy shifts: InP(110) and GaAs(110)MCLEAN, A. B.Surface science. 1989, Vol 220, Num 1, pp L671-L678, issn 0039-6028Article

Limitations to the Norde I-V plotMCLEAN, A. B.Semiconductor science and technology. 1986, Vol 1, Num 3, pp 177-179, issn 0268-1242Article

Surface core-level shifts for the (110) cleavage face of III-V semiconductors : InAs(110)MCLEAN, A. B.Journal of physics. Condensed matter (Print). 1990, Vol 2, Num 4, pp 1027-1032, issn 0953-8984Article

The determination of contact temperature in microcontact spectroscopy = La détermination de la température de contact dans la spectroscopie de microcontactMCLEAN, A. B.Journal of physics. F. Metal physics. 1986, Vol 16, Num 10, pp L249-L253, issn 0305-4608Article

The electronic origin of contrast reversal in bias-dependent STM images of nanolinesMACLEOD, J. M; MIWA, R. H; SRIVASTAVA, G. P et al.Surface science. 2005, Vol 576, Num 1-3, pp 116-122, issn 0039-6028, 7 p.Article

The electronic properties of Si(001)-Bi(2 × n)MARK, A. G; LIPTON-DUFFIN, J. A; MACLEOD, J. M et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 4, pp 571-580, issn 0953-8984, 10 p.Article

Schottky contacts to cleaved GaAs (110) surfaces. I: Electrical properties and microscopic theoriesMCLEAN, A. B; WILLIAMS, R. H.Journal of physics. C. Solid state physics. 1988, Vol 21, Num 4, pp 783-806, issn 0022-3719Article

Transport measurements of Sb contacts to InP(110)ZAHN, D. R. T; MCLEAN, A. B; WILLIAMS, R. H et al.Applied physics letters. 1988, Vol 52, Num 9, pp 739-741, issn 0003-6951Article

Microcontact spectroscopy in praseodymium = Spectroscopie de microcontact dans le praséodymeMCLEAN, A. B; LONZARICH, G. G.Journal of physics. F. Metal physics. 1984, Vol 14, Num 9, pp L185-L190, issn 0305-4608Article

Single 2×1 domain orientation on Si(001) surfaces using aperiodic Bi line arraysMACLEOD, J. M; MCLEAN, A. B.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 4, pp 041306.1-041306.4, issn 1098-0121Article

Surface localized states on InAs(110)SWANSTON, D. M; MCLEAN, A. B; MCILROY, D. N et al.Surface science. 1994, Vol 312, Num 3, pp 361-368, issn 0039-6028Article

Electronic band structure of the two-dimensional surface-state bands of the (1×1) and (1×2) phases of Bi/GaSb(110)MCILROY, D. N; HESKETT, D; MCLEAN, A. B et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 16, pp 11897-11904, issn 0163-1829Article

Electronic properties of nascent GaP(110)-noble-metal interfacesLUDEKE, R; MCLEAN, A. B; TALEB-IBRAHIMI, A et al.Physical review. B, Condensed matter. 1990, Vol 42, Num 5, pp 2982-2995, issn 0163-1829, 14 p.Article

Dependence of core-level photoemission spectra on overlayer growth mode: Al on InP(110) = Dépendance des spectres de photoémission de niveau cœur avec le mode de croissance des couches superficielles: Al sur InP(110)MCLEAN, A. B; MCGOVERN, I. T; STEPHENS, C et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 9, pp 6330-6333, issn 0163-1829Article

Rattling modes and the intrinsic vibrational spectrum of beetle-type scanning tunneling microscopesMIWA, J. A; MACLEOD, J. M; MOFFAT, Antje et al.Ultramicroscopy. 2003, Vol 98, Num 1, pp 43-49, issn 0304-3991, 7 p.Article

Sulfur passivated InP(100) : surface gaps and electron countingMITCHELL, C. E. J; HILL, I. G; MCLEAN, A. B et al.Applied surface science. 1996, Vol 104-05, pp 434-440, issn 0169-4332Conference Paper

Comment on: Lifetime broadening in angle-resolved photoemission. Author's replySTARNBERG, H. I; MCLEAN, A. B.Surface science. 1995, Vol 329, Num 3, pp L624-L631, issn 0039-6028Article

Fine structure of the Ca 2p x-ray-absorption edge for bulk compounds, surfaces, and interfacesHIMPSEL, F. J; KARLSSON, U. O; MCLEAN, A. B et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 9, pp 6899-6907, issn 0163-1829, 9 p.Article

Metal-induced states on the GaAs(110) surface probed by angle-resolved photoemission spectroscopyHESKETT, D; TANG, D; MCLEAN, A. B et al.Applied surface science. 1991, Vol 48-49, pp 260-263, issn 0169-4332, 4 p.Conference Paper

Band dispersion of an interface state: CaF₂/Si(111)MCLEAN, A. B; HIMPSEL, F. J.Physical review. B, Condensed matter. 1989, Vol 39, Num 2, pp 1457-1460, issn 0163-1829Article

The electrical properties of Ga/nGaAs (110) interfacesMCLEAN, A. B; WILLIAMS, R. H.Semiconductor science and technology. 1987, Vol 2, Num 10, pp 654-660, issn 0268-1242Article

Nanolines on silicon surfacesMCLEAN, A. B; HILL, I. G; LIPTON-DUFFIN, J. A et al.International journal of nanotechnology. 2008, Vol 5, Num 9-12, pp 1018-1057, issn 1475-7435, 40 p.Article

Layer-by-layer electronic structure at semiconductor-metal interfaces : band gap and magnetismHIMPSEL, F. J; DRUBE, W; MCLEAN, A. B et al.Applied surface science. 1992, Vol 56-58, pp 160-168, issn 0169-4332, aConference Paper

Low pass filter for soft x-ray monochromatorsTERMINELLO, L. J; MCLEAN, A. B; SANTONI, A et al.Review of scientific instruments. 1990, Vol 61, Num 6, pp 1626-1628, issn 0034-6748Article

Temperature effects on the formation of the Sb/InP(110) interface = Effets de la température sur la formation de l'interface Sb/InP (110)ZAHN, D. R. T; RICHTER, W; MCLEAN, A. B et al.Applied surface science. 1989, Vol 41-42, Num 1-4, pp 179-183, issn 0169-4332Conference Paper